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RJK0454DPB
- Part No
- RJK0454DPB
- Manufacturer
- Renesas
- Description
- Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- RJK0454DPB
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 40 A |
| Drain to Source Resistance | 3.9 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 55 W |
| Number of Elements | 1 |
| Power Dissipation | 55 W |
| Resistance | 3.9 mΩ |
| Case/Package | SC |
| Number of Pins | 5 |
| Number of Terminals | 4 |
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