QSE133 Generic image

QSE133

Part No
QSE133
Manufacturer
onsemi
Description
QSE133 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor
Datasheet
QSE133
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Voltage (VCEO) 30 V
    Dark Current 100 nA
    Fall Time 50 µs
    Lens Style Domed
    Max Collector Current 9 mA
    Max Input Current 100 µA
    Max Operating Temperature 100 °C
    Max Power Dissipation 100 mW
    Min Operating Temperature -40 °C
    Number of Channels 1
    Number of Circuits 1
    Number of Elements 1
    Operating Supply Voltage 5 V
    Orientation Side View
    Output Power 100 mW
    Output Voltage 30 V
    Packaging Bulk
    Peak Wavelength 880 nm
    Polarity NPN
    Power Consumption 100 mW
    Power Dissipation 100 mW
    Rise Time 20 µs
    Schedule B 8541407080, 8541407080|8541407080|8541407080|8541407080|8541407080
    Viewing Angle 25 °
    Wavelength 880 nm
    Case/Package Radial
    Contact Plating Tin
    Lens Color Black, Clear
    Mount Through Hole
    Number of Pins 2
    Shape Round
    Weight 135 mg
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