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QRD1114
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Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 30 V |
| Current Rating | 20 mA |
| Fall Time | 50 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.7 V |
| Input Current | 20 mA |
| Max Collector Current | 1 mA |
| Max Operating Temperature | 85 °C |
| Max Output Current | 5 mA |
| Max Output Voltage | 30 V |
| Max Power Dissipation | 100 mW |
| Max Supply Voltage | 1.7 V |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Operating Supply Voltage | 1.7 V |
| Output Type | Phototransistor |
| Output Voltage | 30 V |
| Packaging | Bulk |
| Power Dissipation | 100 mW |
| Response Time | 10 µs |
| Reverse Breakdown Voltage | 5 V |
| Reverse Voltage (DC) | 5 V |
| Rise Time | 10 µs |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000 |
| Sensing Distance | 1.27 mm |
| Wavelength | 940 nm |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 4 |
| Weight | 0 g |
| Height | 4.65 mm |
| Length | 6.1 mm |
| Width | 4.39 mm |
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