PUMD3 Generic image

PUMD3

Part No
PUMD3
Manufacturer
NXP
Description
Bipolar (Bjt) Array Transistor, Brt, Npn, Pnp, 50 V, 200 Mw, 100 Ma, 30, Sot-363
Datasheet
PUMD3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Ambient Temperature Range High 150 °C
    Collector Base Voltage (VCBO) 50 V
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 150 mV
    Collector Emitter Voltage (VCEO) 50 V
    Emitter Base Voltage (VEBO) 10 V
    hFE Min 30
    Max Collector Current 100 mA
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 200 mW
    Min Operating Temperature -65 °C
    Number of Elements 2
    Packaging Cut Tape
    Polarity NPN, PNP
    Power Dissipation 300 mW
    Transition Frequency 230 MHz
    Case/Package SOT-363
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 1.1 mm
    Length 2.2 mm
    Width 1.35 mm
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