PSMN7R0-100ES Generic image

PSMN7R0-100ES

Part No
PSMN7R0-100ES
Manufacturer
NXP
Description
MOSFET N-CH 100V I2PAK
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Manufacturer Nexperia USA Inc.
    Win Source Part Number 210296-PSMN7R0-100ES
    Popularity Medium
    Fake Threat In the Open Market 66 pct.
    Supply and Demand Status Limited
    Temperature Range - Operating -55°C to 175°C (TJ)
    Categories Discrete Semiconductor Products
    Packaging Tube/Rail
    Status Active
    Mounting Through Hole
    Case / Package I2PAK
    Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
    Technology MOSFET
    Polarity N-Channel
    Drain-Source Breakdown Voltage 100V
    Continuous Drain Current at 25°C 100A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Gate-Source Threshold Voltage 4V @ 1mA
    Max Gate Charge 125nC @ 10V
    Max Input Capacitance 6686pF @ 50V
    Maximum Gate-Source Voltage ±20V
    Power Dissipation (Max) 269W (Tc)
    Maximum Rds On at Id,Vgs 6.8 mOhm @ 15A, 10V
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