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PSMN3R0-30YL
- Part No
- PSMN3R0-30YL
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 100A I(D), 30V, 0.00404ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
- Datasheet
- PSMN3R0-30YL
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Resistance | 4.04 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 81 W |
| Min Breakdown Voltage | 30 V |
| Number of Elements | 1 |
| Power Dissipation | 81 W |
| Contact Plating | Tin |
| Number of Terminals | 4 |
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