PMV60EN Generic image

PMV60EN

Part No
PMV60EN
Manufacturer
NXP
Description
Power Field-Effect Transistor, 4.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet
PMV60EN
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.7 A
    Current 47 A
    Drain to Source Resistance 55 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 2 W
    Termination SMD/SMT
    Threshold Voltage 2 V
    Voltage 30 V
    Case/Package SOT-23
    Contact Plating Tin
    Number of Pins 3
    Number of Terminals 3
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