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PMV55ENEAR
- Part No
- PMV55ENEAR
- Manufacturer
- NXP
- Description
- Trans MOSFET N-CH 60V 3.1A Automotive AEC-Q101 3-Pin SOT-23 T/R
- Datasheet
- PMV55ENEAR
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Ambient Temperature Range High | 150 °C |
| Continuous Drain Current (ID) | 3.1 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 60 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 646 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 478 mW |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 478 mW |
| Rds On Max | 60 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 33 ns |
| Turn-On Delay Time | 9 ns |
| Case/Package | TO-236-3 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 1.1 mm |
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