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PHT4NQ10LT
- Part No
- PHT4NQ10LT
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- PHT4NQ10LT
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.5 A |
| Drain to Source Resistance | 250 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 6.9 W |
| Min Breakdown Voltage | 100 V |
| Number of Elements | 1 |
| Number of Terminals | 4 |
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