PDTA123ET Generic image

PDTA123ET

Part No
PDTA123ET
Manufacturer
NXP
Description
Bipolar (Bjt) Single Transistor, Brt, Pnp, 50 V, 250 Mw, 100 Ma, 30 Rohs Compliant: Yes
Datasheet
PDTA123ET
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 150 mV
    Collector Emitter Voltage (VCEO) 50 V
    Element Configuration Single
    Emitter Base Voltage (VEBO) -10 V
    hFE Min 20
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 250 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Cut Tape
    Polarity PNP
    Power Dissipation 250 mW
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1 mm
    Length 3 mm
    Width 1.4 mm
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