PBSS4032PD Generic image

PBSS4032PD

Part No
PBSS4032PD
Manufacturer
NXP
Description
Small Signal Bipolar Transistor, 2.7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Datasheet
PBSS4032PD
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage -30 V
    Collector Emitter Voltage (VCEO) 30 V
    hFE Min 25
    Max Collector Current 2.7 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 480 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity PNP
    Transition Frequency 104 MHz
    Case/Package SOT-457
    Contact Plating Tin
    Number of Pins 6
    Number of Terminals 6
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