PBSS302PD Generic image

PBSS302PD

Part No
PBSS302PD
Manufacturer
NXP
Description
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin
Datasheet
PBSS302PD
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage -40 V
    Collector Emitter Voltage (VCEO) 40 V
    hFE Min 30
    Max Collector Current 4 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 1.1 W
    Transition Frequency 110 MHz
    Contact Plating Tin
    Number of Pins 6
    Number of Terminals 6
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