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NVTFS5116PLWFTAG
- Part No
- NVTFS5116PLWFTAG
- Manufacturer
- onsemi
- Description
- Power Field-Effect Transistor, 14A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Datasheet
- NVTFS5116PLWFTAG
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 14 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Single |
| Fall Time | 36 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.258 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 21 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 52 mΩ |
| Rise Time | 68 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 24 ns |
| Turn-On Delay Time | 14 ns |
| Number of Pins | 8 |
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