NTND31211PZTAG Generic image

NTND31211PZTAG

Part No
NTND31211PZTAG
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual P-Channel 20V 0.127A 6-Pin XLLGA T/R
Datasheet
NTND31211PZTAG
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 127 mA
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 5 Ω
    Drain to Source Voltage (Vdss) -20 V
    Gate to Source Voltage (Vgs) 8 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 125 mW
    Turn-Off Delay Time 280 ns
    Turn-On Delay Time 37 ns
    Number of Terminals 6
    Height 440 µm
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