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NTMD4820NR2G
- Part No
- NTMD4820NR2G
- Manufacturer
- onsemi
- Description
- MOSFET 2N-CH 30V 4.9A 8SOIC
- Datasheet
- NTMD4820NR2G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.9 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 20 mΩ |
| Element Configuration | Dual |
| Fall Time | 4 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 900 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.28 W |
| Rds On Max | 34 mΩ |
| Rise Time | 4 ns |
| Turn-Off Delay Time | 21 ns |
| Turn-On Delay Time | 9.4 ns |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.5 mm |
| Length | 5 mm |
| Width | 4 mm |
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