NTLJS3113PT1G Generic image

NTLJS3113PT1G

Part No
NTLJS3113PT1G
Manufacturer
onsemi
Description
MOSFET P-CH 20V 3.5A 6-WFDN
Datasheet
NTLJS3113PT1G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.5 A
    Current Rating -7.7 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 50 mΩ
    Element Configuration Single
    Fall Time 17.5 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 1.329 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.9 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 1.9 W
    Rds On Max 40 mΩ
    Resistance 40 MΩ
    Rise Time 17.5 ns
    Schedule B 8541290080
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 6.9 ns
    Voltage Rating (DC) -20 V
    Case/Package DFN
    Contact Plating Tin
    Number of Pins 6
    Number of Terminals 6
    Height 750 µm
    Length 2 mm
    Width 2 mm
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