NTHS2101PT1G Generic image

NTHS2101PT1G

Part No
NTHS2101PT1G
Manufacturer
onsemi
Description
MOSFET P-CH 8V 5.4A CHIPFET
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.4 A
    Current Rating -5.4 A
    Drain to Source Breakdown Voltage -8 V
    Drain to Source Resistance 25 mΩ
    Drain to Source Voltage (Vdss) 8 V
    Fall Time 28 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 2.4 nF
    Max Power Dissipation 1.3 W
    Min Breakdown Voltage 8 V
    Nominal Vgs -450 mV
    Number of Elements 1
    Power Dissipation 1.3 W
    Rds On Max 25 mΩ
    Rise Time 28 ns
    Turn-Off Delay Time 73 ns
    Voltage Rating (DC) -8 V
    Case/Package SMD/SMT
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
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