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NTD4860NT4G
- Part No
- NTD4860NT4G
- Manufacturer
- onsemi
- Description
- MOSFET N-CH 25V 10.4A DPAK
- Datasheet
- NTD4860NT4G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 10.4 A |
| Drain to Source Breakdown Voltage | 25 V |
| Drain to Source Resistance | 11.1 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Element Configuration | Single |
| Fall Time | 2.3 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.308 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 50 W |
| Min Breakdown Voltage | 25 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2 W |
| Rds On Max | 7.5 mΩ |
| Rise Time | 17 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 22 ns |
| Case/Package | DPAK |
| Number of Pins | 4 |
| Number of Terminals | 2 |
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