Generic image
NTD4806N-35G
- Part No
- NTD4806N-35G
- Manufacturer
- onsemi
- Description
- Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 76A 2.14W 4.7ns
- Datasheet
- NTD4806N-35G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 9.4 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 4.7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 2.142 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 68 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 2.14 W |
| Rds On Max | 6 mΩ |
| Rise Time | 23.8 ns |
| Turn-Off Delay Time | 26 ns |
| Case/Package | TO-251-3 |
| Contact Plating | Tin |
| Number of Pins | 3 |
| Number of Terminals | 3 |
added to cart
View cart
Related Products
