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NTD3055L170-1G
- Part No
- NTD3055L170-1G
- Manufacturer
- onsemi
- Description
- MOSFET N-CH 60V 9A IPAK
- Datasheet
- NTD3055L170-1G
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9 A |
| Current Rating | 9 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 170 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Single |
| Fall Time | 38 ns |
| Gate to Source Voltage (Vgs) | 15 V |
| Input Capacitance | 275 pF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 1.5 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 1.7 V |
| Number of Elements | 1 |
| Power Dissipation | 28.5 W |
| Rds On Max | 170 mΩ |
| Rise Time | 69 ns |
| Turn-Off Delay Time | 10 ns |
| Voltage Rating (DC) | 60 V |
| Case/Package | TO-251 |
| Number of Pins | 4 |
| Number of Terminals | 3 |
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