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NP55N055SDG-E1-AZ
- Part No
- NP55N055SDG-E1-AZ
- Manufacturer
- Renesas
- Description
- Power Field-Effect Transistor, 55A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- NP55N055SDG-E1-AZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 55 A |
| Drain to Source Breakdown Voltage | 55 V |
| Drain to Source Resistance | 7.4 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Fall Time | 6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 77 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 9.5 mΩ |
| Rise Time | 16 ns |
| Turn-Off Delay Time | 71 ns |
| Turn-On Delay Time | 17 ns |
| Case/Package | TO-252 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Height | 2.4 mm |
| Length | 6 mm |
| Width | 6 mm |
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