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NP23N06YDG-E2-AY
- Part No
- NP23N06YDG-E2-AY
- Manufacturer
- Renesas
- Description
- Renesas MOS Field Effect Transistor
- Datasheet
- NP23N06YDG-E2-AY
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 23 A |
| Drain to Source Resistance | 37 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Part Family | NP23N06YDG |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 60 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rds On Max | 27 mΩ |
| MSL | 1 |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.45 mm |
| Length | 5 mm |
| Width | 5 mm |
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