NP110N04PUG-E1 Generic image

NP110N04PUG-E1

Part No
NP110N04PUG-E1
Manufacturer
Renesas
Description
MOSFET N-CH 40V MP-25ZP/TO-263
Test Report
Available
Samples
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    Product Specification

    Specification Value
    Win Source Part Number 045317-NP110N04PUG-E1
    Manufacturer Renesas Electronics America
    Popularity Medium
    Fake Threat In the Open Market 35 pct.
    Supply and Demand Status Limited
    Categories Discrete Semiconductor Products
    Packaging Reel - TR
    Status Active
    Temperature Range - Operating 175°C (TJ)
    Mounting SMD (SMT)
    Case / Package TO-263
    Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Polarity N-Channel
    Technology MOSFET
    Drain-Source Breakdown Voltage 40V
    Continuous Drain Current at 25°C 110A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Gate-Source Threshold Voltage 4V @ 250μA
    Max Gate Charge 390nC @ 10V
    Max Input Capacitance 25700pF @ 25V
    Maximum Gate-Source Voltage ±20V
    Power Dissipation (Max) 1.8W (Ta), 288W (Tc)
    Maximum Rds On at Id,Vgs 1.8 mOhm @ 55A, 10V
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