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NP100N055PUK-E1-AY
- Part No
- NP100N055PUK-E1-AY
- Manufacturer
- Renesas
- Description
- Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- NP100N055PUK-E1-AY
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 7.35 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 176 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Rds On Max | 3.25 mΩ |
| Rise Time | 12 ns |
| Turn-Off Delay Time | 70 ns |
| Turn-On Delay Time | 28 ns |
| Case/Package | TO-263 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Height | 4.65 mm |
| Length | 10 mm |
| Width | 9 mm |
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