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NIS5112D1R2G
- Part No
- NIS5112D1R2G
- Manufacturer
- onsemi
- Description
- IC ELECTRONIC FUSE HOTSWAP 8SOIC
- Datasheet
- NIS5112D1R2G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 1 W |
| Max Supply Voltage | 18 V |
| Min Operating Temperature | -40 °C |
| Min Supply Voltage | 9 V |
| Nominal Input Voltage | 12 V |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Operating Supply Voltage | 12 V |
| Output Current | 2.5 A |
| Packaging | Tape & Reel |
| Schedule B | 8542310000, 8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|8542310000|85 |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Depth | 4 mm |
| Height | 1.75 mm |
| Height - Seated (Max) | 1.75 mm |
| Length | 4.9 mm |
| Terminal Pitch | 1.27 mm |
| Width | 3.9 mm |
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