NID9N05CLT4G Generic image

NID9N05CLT4G

Part No
NID9N05CLT4G
Manufacturer
onsemi
Description
Mosfet Transistor, N Channel, 9 A, 52 V, 181 Mohm, 4 V, 1.75 V Rohs Compliant: Yes
Datasheet
NID9N05CLT4G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Clamping Voltage 59 V
    Continuous Drain Current (ID) 9 A
    Current Rating 9 A
    Drain to Source Breakdown Voltage 52 V
    Drain to Source Resistance 181 mΩ
    Drain to Source Voltage (Vdss) 52 V
    Dual Supply Voltage 52 V
    Element Configuration Single
    Fall Time 1.8 µs
    Fault Protection Over Voltage
    Gate to Source Voltage (Vgs) 15 V
    Interface On/Off
    Max Operating Temperature 175 °C
    Max Output Current 9 A
    Max Power Dissipation 28.8 W
    Min Breakdown Voltage 52 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.75 V
    Number of Elements 1
    Number of Outputs 1
    Output Configuration Low Side
    Power Dissipation 28.8 W
    Resistance 90 MΩ
    Rise Time 500 ns
    Termination SMD/SMT
    Threshold Voltage 1.75 V
    Turn-Off Delay Time 2.5 µs
    Voltage Rating (DC) 52 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
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