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MW6S010NR1
- Part No
- MW6S010NR1
- Manufacturer
- NXP
- Description
- RF Power Transistor, 450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
- Datasheet
- MW6S010NR1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 125 mA |
| Current Rating | 125 mA |
| Drain to Source Voltage (Vdss) | 68 V |
| Frequency | 960 MHz |
| Gain | 18 dB |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Frequency | 1.5 GHz |
| Max Operating Temperature | 225 °C |
| Max Output Power | 10 W |
| Max Power Dissipation | 61.4 W |
| Min Breakdown Voltage | 68 V |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Output Power | 10 W |
| Packaging | Tape and Reel |
| Power Dissipation | 61.4 W |
| Power Gain | 20 dB |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Test Current | 125 mA |
| Test Voltage | 28 V |
| Voltage Rating | 68 V |
| Voltage Rating (DC) | 28 V |
| Case/Package | TO-270 |
| Mount | Surface Mount |
| Number of Terminals | 2 |
| Weight | 529.540742 mg |
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