MTD3055VL Generic image

MTD3055VL

Part No
MTD3055VL
Manufacturer
onsemi
Description
N-Channel 60 V 180 mOhm SMT Enhancement Mode Field Effect Transistor-TO-252-3
Datasheet
MTD3055VL
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Current Rating 12 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 180 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Dual Supply Voltage 60 V
    Element Configuration Single
    Fall Time 90 ns
    Gate to Source Voltage (Vgs) 15 V
    Input Capacitance 570 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 48 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 48 W
    Rds On Max 180 mΩ
    Resistance 107 mΩ
    Rise Time 190 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.5 V
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 60 V
    Case/Package TO-252
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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