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MRF21060R3
- Part No
- MRF21060R3
- Manufacturer
- NXP
- Description
- RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- MRF21060R3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Max Operating Temperature | 200 °C |
| Max Power Dissipation | 180 W |
| Min Breakdown Voltage | 65 V |
| Number of Elements | 1 |
| Body Material | Ceramic |
| Number of Terminals | 2 |
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