MPSA42G Generic image

MPSA42G

Part No
MPSA42G
Manufacturer
onsemi
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 25 @ 1mA 10V 100nA ICBO 625mW 50MHz
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 300 V
    Collector Emitter Breakdown Voltage 300 V
    Collector Emitter Saturation Voltage 500 mV
    Collector Emitter Voltage (VCEO) 300 V
    Current Rating 500 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 6 V
    Frequency 50 MHz
    Gain Bandwidth Product 50 MHz
    hFE Min 40
    Max Collector Current 500 mA
    Max Frequency 50 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Bulk
    Polarity NPN
    Power Dissipation 625 mW
    Transition Frequency 50 MHz
    Voltage Rating (DC) 300 V
    Case/Package TO-92-3
    Number of Pins 3
    Number of Terminals 3
    Weight 4.535924 g
    Height 5.33 mm
    Length 5.2 mm
    Width 4.19 mm
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