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MOC3082M

Part No: MOC3082M
Manufacturer: onsemi
Description: The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing
Datasheet: MOC3082M
Test Report: Available
Samples: Available

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Specification	Value
Element Configuration	Single
Forward Current	60 mA
Forward Voltage	1.3 V
Hold Current	500 µA
Input Current	30 mA
Isolation Voltage	7.5 kV
Leakage Current	100 µA
Max Input Voltage	1.5 V
Max Operating Temperature	85 °C
Max Power Dissipation	250 mW
Max Repetitive Reverse Voltage (Vrrm)	800 V
Min Operating Temperature	-40 °C
Nominal Input Voltage	1.3 V
Number of Channels	1
Number of Circuits	1
Number of Elements	1
Output Voltage	800 V
Packaging	Bulk
Peak Non-Repetitive Surge Current	1 A
Power Dissipation	250 mW
Reverse Breakdown Voltage	6 V
Schedule B	8541408000, 8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|8541408000\|85
Voltage Rating (DC)	600 V
Case/Package	DIP
Contact Plating	Tin
Mount	Through Hole
Number of Pins	6
Weight	855 mg
Height	6.35 mm
Length	6.35 mm
Width	6.35 mm