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MMRF1004GNR1
- Part No
- MMRF1004GNR1
- Manufacturer
- NXP
- Description
- RF Power Transistor, 1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
- Datasheet
- MMRF1004GNR1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Frequency | 2.17 GHz |
| Gain | 15.5 dB |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Frequency | 2.2 GHz |
| Max Operating Temperature | 225 °C |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Output Power | 10 W |
| Packaging | Tape & Reel (TR) |
| Test Current | 130 mA |
| Test Voltage | 28 V |
| Voltage Rating | 68 V |
| Mount | Surface Mount |
| Number of Pins | 3 |
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