MMG3H21NT1 Generic image

MMG3H21NT1

Part No
MMG3H21NT1
Manufacturer
NXP
Description
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier | IC RF AMP 0HZ-6GHZ SOT89-4
Datasheet
MMG3H21NT1
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Frequency 6 GHz
    Gain 18.3 dB
    Impedance 50 Ω
    Max Frequency 6 GHz
    Max Operating Temperature 150 °C
    Max Supply Current 110 mA
    Max Supply Voltage 5 V
    Min Supply Voltage 5 V
    Noise Figure 5.5 dB
    Nominal Supply Current 90 mA
    Number of Channels 1
    Number of Circuits 1
    Operating Supply Current 90 mA
    P1dB 20.5 dBm
    Packaging Cut Tape
    Polarity NPN, PNP
    Schedule B 8542330000, 8542330000|8542330000, 8542330000|8542330000|8542330000, 8542330000|8542330000|8542330000|8542330000
    Test Frequency 900 MHz
    Case/Package SOT-89
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 50.802345 mg
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