MMBTA14LT1G Generic image

MMBTA14LT1G

Part No
MMBTA14LT1G
Manufacturer
onsemi
Description
MMBTA14LT1G on Semiconductor Bjt Transistor Darlington NPN 30V 0.3A 300MW 3-PIN SOT-23 T/r Rohs
Datasheet
MMBTA14LT1G
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 30 V
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Saturation Voltage 1.5 V
    Collector Emitter Voltage (VCEO) 30 V
    Continuous Collector Current 300 mA
    Current Rating 300 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 10 V
    hFE Min 20000
    Max Breakdown Voltage 30 V
    Max Collector Current 300 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 225 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Polarity NPN
    Power Dissipation 300 mW
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85
    Transition Frequency 125 MHz
    Voltage Rating (DC) 30 V
    Case/Package SOT-23-3
    Contact Plating Tin
    Number of Pins 3
    Number of Terminals 3
    Weight 1.437803 g
    Height 940 µm
    Length 2.9 mm
    Width 1.3 mm
    added to cart View cart