MJE200G Generic image

MJE200G

Part No
MJE200G
Manufacturer
onsemi
Description
5.0 A, 25 V NPN Bipolar Power Transistor
Datasheet
MJE200G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 40 V
    Collector Emitter Breakdown Voltage 25 V
    Collector Emitter Saturation Voltage 1.8 V
    Collector Emitter Voltage (VCEO) 40 V
    Current Rating 5 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 8 V
    Frequency 65 MHz
    Gain Bandwidth Product 65 MHz
    hFE Min 10
    Max Collector Current 5 A
    Max Frequency 65 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.5 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Bulk
    Polarity NPN
    Power Dissipation 15 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Transition Frequency 65 MHz
    Voltage Rating (DC) 25 V
    Case/Package TO-225
    Number of Pins 3
    Number of Terminals 3
    Weight 4.535924 g
    Height 14.2 mm
    Length 7.7978 mm
    Width 2.9972 mm
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