MJD32CTF Generic image

MJD32CTF

Part No
MJD32CTF
Manufacturer
onsemi
Description
3.0 A, 100 V PNP Bipolar Power Transistor
Datasheet
MJD32CTF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -100 V
    Collector Emitter Breakdown Voltage 100 V
    Collector Emitter Saturation Voltage -1.2 V
    Collector Emitter Voltage (VCEO) 100 V
    Current Rating -3 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 3 MHz
    Gain Bandwidth Product 3 MHz
    hFE Min 10
    Max Breakdown Voltage 100 V
    Max Collector Current 3 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 15 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 1.56 W
    Schedule B 8541290080
    Transition Frequency 3 MHz
    Voltage Rating (DC) -100 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.527 mm
    Length 6.6 mm
    Width 6.1 mm
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