LET20030C Generic image

LET20030C

Part No
LET20030C
Manufacturer
STMicroelectronics
Description
Trans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose
Datasheet
LET20030C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Current Rating 9 A
    Drain to Source Voltage (Vdss) 75 V
    Frequency 2 GHz
    Gain 13.9 dB
    Gate to Source Voltage (Vgs) 80 V
    Max Frequency 2 GHz
    Max Operating Temperature 200 °C
    Max Power Dissipation 65 W
    Min Breakdown Voltage 65 V
    Min Operating Temperature -65 °C
    Noise Figure 13.9 dB
    Number of Elements 1
    Output Power 45 W
    Packaging Bulk
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Test Current 400 mA
    Test Voltage 28 V
    Voltage Rating 80 V
    Case/Package M
    Mount Screw
    Number of Pins 3
    Number of Terminals 2
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