ISC027N10NM6ATMA1 Generic image

ISC027N10NM6ATMA1

Part No
ISC027N10NM6ATMA1
Manufacturer
Infineon
Description
ISC027N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Infineon’s latest
Test Report
Available
Samples
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 192 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 2.7 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Gate to Source Voltage (Vgs) 20 V
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 217 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3 W
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 11 ns
    Contact Plating Tin
    Number of Terminals 8
    Height 1.2 mm
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