IRLS3036-7PPBF Generic image

IRLS3036-7PPBF

Part No
IRLS3036-7PPBF
Manufacturer
Infineon
Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
Datasheet
IRLS3036-7PPBF
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 240 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 1.9 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 170 ns
    Gate to Source Voltage (Vgs) 16 V
    Input Capacitance 11.27 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 380 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 1.9 mΩ
    Package Quantity 3000
    Power Dissipation 380 W
    Rds On Max 1.9 mΩ
    Resistance 1.9 MΩ
    Rise Time 540 ns
    Schedule B 8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 89 ns
    Turn-On Delay Time 81 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 7
    Number of Terminals 6
    Height 4.572 mm
    Length 10.668 mm
    Width 9.65 mm
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