IRLHS2242TRPBF Generic image

IRLHS2242TRPBF

Part No
IRLHS2242TRPBF
Manufacturer
Infineon
Description
20V Single P-Channel HEXFET Power MOSFET in a PQFN 2mm by 2mm package, PG-TSDSON-6, RoHS
Datasheet
IRLHS2242TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.2 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 31 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Fall Time 66 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 877 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 9.6 W
    Manufacturer Package Identifier PG-TSDSON-6
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -800 mV
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 31 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 2.1 W
    Rds On Max 31 mΩ
    Resistance 31 MΩ
    Rise Time 54 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -800 mV
    Turn-Off Delay Time 54 ns
    Turn-On Delay Time 7.9 ns
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 1 mm
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