IRG4BC10SD-S Generic image

IRG4BC10SD-S

Part No
IRG4BC10SD-S
Manufacturer
Infineon
Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) | IGBT 600V 14A 38W D2PAK
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Manufacturer Infineon Technologies
    Win Source Part Number 1188215-IRG4BC10SD-S
    Manufacturer Homepage www.irf.com
    Popularity Medium
    Fake Threat In the Open Market 54 pct.
    Supply and Demand Status Limited
    Categories Discrete Semiconductor Products
    Packaging Tube
    Status Obsolete
    Temperature Range - Operating -55°C ~ 150°C
    Supplier Device Package D2PAK
    MSL Level 1 (Unlimited)
    Voltage - Collector Emitter Breakdown (Maximum) 600V
    Current - Collector (Ic) (Maximum) 14A
    Current - Collector Pulsed (Icm) 18A
    Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 8A
    Maximum Power 38W
    Switching Energy 310μJ (on), 3.28mJ (off)
    Input Type Standard
    Gate Charge 15nC
    Td (on/off) at 25°C 76ns/815ns
    Test Condition 480V, 8A, 100Ohm, 15V
    Reverse Recovery Time (trr) 28ns
    Mounting Style SMD
    Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Manufacturer Pack Quantity 50
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