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IRFW520ATM
- Part No
- IRFW520ATM
- Manufacturer
- onsemi
- Description
- Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
- Datasheet
- IRFW520ATM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.2 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 200 mΩ |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 3.8 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Rise Time | 10 ns |
| Turn-Off Delay Time | 19 ns |
| Case/Package | TO-263 |
| Number of Terminals | 2 |
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