IRFS730B Generic image

IRFS730B

Part No
IRFS730B
Manufacturer
onsemi
Description
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
IRFS730B
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.5 A
    Drain to Source Breakdown Voltage 400 V
    Drain to Source Resistance 1 Ω
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 30 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 38 W
    Rise Time 55 ns
    Turn-Off Delay Time 85 ns
    Number of Pins 3
    Number of Terminals 3
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