IRFS3004PBF Generic image

IRFS3004PBF

Part No
IRFS3004PBF
Manufacturer
Infineon
Description
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Datasheet
IRFS3004PBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 195 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 1.75 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 130 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 9.2 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 380 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 1.75 mΩ
    Package Quantity 1000
    Power Dissipation 380 W
    Rds On Max 1.75 mΩ
    Rise Time 220 ns
    Threshold Voltage 4 V
    Turn-Off Delay Time 90 ns
    Turn-On Delay Time 23 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 5.084 mm
    Length 10.67 mm
    Width 9.65 mm
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