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IRFR812PBF
- Part No
- IRFR812PBF
- Manufacturer
- Infineon
- Description
- Power Field-Effect Transistor, 3.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- IRFR812PBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.6 A |
| Drain to Source Breakdown Voltage | 500 V |
| Drain to Source Resistance | 1.85 Ω |
| Drain to Source Voltage (Vdss) | 500 V |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 810 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 78 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 2.2 Ω |
| Package Quantity | 3000 |
| Power Dissipation | 78 W |
| Rds On Max | 2.2 Ω |
| Recovery Time | 110 ns |
| Rise Time | 22 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 24 ns |
| Turn-On Delay Time | 14 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Height | 2.39 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
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