IRFR3709ZTRLPBF Generic image

IRFR3709ZTRLPBF

Part No
IRFR3709ZTRLPBF
Manufacturer
Infineon
Description
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Datasheet
IRFR3709ZTRLPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 30 A
    Current Rating 86 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 6.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 3.9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.33 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 79 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 6.5 mΩ
    Package Quantity 3000
    Power Dissipation 79 W
    Rds On Max 6.5 mΩ
    Rise Time 12 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 15 ns
    Turn-On Delay Time 12 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.3876 mm
    Length 6.7056 mm
    Width 6.22 mm
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