IRFD024PBF Generic image

IRFD024PBF

Part No
IRFD024PBF
Manufacturer
Vishay
Description
MOSFET N-CH 60V 2.5A 4-DIP | Siliconix / Vishay IRFD024PBF
Datasheet
IRFD024PBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.5 A
    Current Rating 2.5 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 100 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 58 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 640 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 1.3 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 1.3 W
    Rds On Max 100 mΩ
    Recovery Time 180 ns
    Resistance 100 mΩ
    Rise Time 58 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Threshold Voltage 4 V
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 13 ns
    Voltage Rating (DC) 60 V
    Case/Package DIP
    Mount Through Hole
    Number of Pins 4
    Number of Terminals 3
    Height 4.57 mm
    Length 5 mm
    Width 6.29 mm
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