IRF8910GTRPBF Generic image

IRF8910GTRPBF

Part No
IRF8910GTRPBF
Manufacturer
Infineon
Description
Trans Mosfet N-ch 20V 10A 8-PIN SOIC T/r
Datasheet
IRF8910GTRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 10 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 13.4 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 4.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 960 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 13.4 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 2 W
    Rds On Max 13.4 mΩ
    Rise Time 10 ns
    Turn-Off Delay Time 9.7 ns
    Turn-On Delay Time 6.2 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.4986 mm
    Length 4.9784 mm
    Width 3.9878 mm
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