IRF7780MTRPBF Generic image

IRF7780MTRPBF

Part No
IRF7780MTRPBF
Manufacturer
Infineon
Description
Single N-Channel 75 V 5.7 mOhm 124 nC HEXFET® Power Mosfet - DirectFET®
Datasheet
IRF7780MTRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 89 A
    Drain to Source Breakdown Voltage 75 V
    Drain to Source Resistance 4.5 mΩ
    Drain to Source Voltage (Vdss) 75 V
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.504 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 96 W
    Min Operating Temperature -55 °C
    Number of Channels 1
    On-State Resistance 5.7 mΩ
    Package Quantity 4800
    Packaging Tape & Reel
    Power Dissipation 96 W
    Rds On Max 5.7 mΩ
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 18 ns
    Mount Surface Mount
    Height 700 µm
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