IRF7739L1TRPBF Generic image

IRF7739L1TRPBF

Part No
IRF7739L1TRPBF
Manufacturer
Infineon
Description
Single N-Channel 40 V 1 mOhm 220 nC HEXFET® Power Mosfet - DirectFET®
Datasheet
IRF7739L1TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 375 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 700 µΩ
    Drain to Source Voltage (Vdss) 40 V
    Fall Time 42 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 11.88 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 125 W
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 1 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 3.8 W
    Rds On Max 1 mΩ
    Rise Time 71 ns
    Turn-Off Delay Time 56 ns
    Turn-On Delay Time 21 ns
    Mount Surface Mount
    Number of Pins 15
    Height 740 µm
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